Conformal chemical vapor deposition of boron-rich boron carbide thin films from triethylboron
نویسندگان
چکیده
We report conformal chemical vapor deposition (CVD) of boron carbide (BxC) thin films on silicon substrates with 8:1 aspect-ratio morphologies, using triethylboron [B(C2H5)3] as a single source CVD precursor. Step coverage (SC) calculated from the cross-sectional scanning electron microscopy measurements shows that deposited at ≤450 °C were highly (SC = 1). attribute this to low reaction probability substrate temperatures enabling more gas phase diffusion into features. The state material, determined by x-ray photoelectron spectroscopy, B–B, B–C, C–B, and C–C bonds. Quantitative analysis time-of-flight elastic recoil detection reveals 450 are boron-rich around 82.5 at. % B, 15.6 C, 1.3 O, 0.6 H, i.e., about B5C. film density measured reflectometry varies 1.9 2.28 g/cm3 depending temperature.
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Mewlude Imam, Konstantin Gaul, Andreas Stegmueller, Carina Höglund, Jens Jensen, Lars Hultman, Jens Birch, Ralf Tonner and Henrik Pedersen, Gas phase chemical vapor deposition chemistry of triethylboron probed by boron-carbon thin film deposition and quantum chemical calculations, 2015, Journal of Materials Chemistry C, (3), 41, 10898-10906. http://dx.doi.org/10.1039/c5tc02293b Copyright: Royal...
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ژورنال
عنوان ژورنال: Journal of vacuum science & technology
سال: 2022
ISSN: ['2327-9877', '0734-211X']
DOI: https://doi.org/10.1116/6.0002203